Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
نویسندگان
چکیده
Strong quantization effects and tuneable near-infrared photoluminescence emission are reported in mechanically exfoliated crystals of γ-rhombohedral semiconducting InSe. The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.
منابع مشابه
Nanomechanical probing of the layer/substrate interface of an exfoliated InSe sheet on sapphire
Van der Waals (vdW) layered crystals and heterostructures have attracted substantial interest for potential applications in a wide range of emerging technologies. An important, but often overlooked, consideration in the development of implementable devices is phonon transport through the structure interfaces. Here we report on the interface properties of exfoliated InSe on a sapphire substrate....
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